STP9NM40N datasheet(3/18 Pages) STMICROELECTRONICS

Part #	STP9NM40N

Description	N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™II Power MOSFET in DPAK and TO-220 packages

PDF	18 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 18 page

STD9NM40N, STP9NM40N

Electrical ratings

Doc ID 023762 Rev 2

3/18

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

400

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

5.6

Drain current (continuous) at TC = 100 °C

4.3

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

22.4

PTOT

Total dissipation at TC = 25 °C

dv/dt (2)

ISD ≤ 5.6 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

DPAK

TO-220

Rthj-case Thermal resistance junction-case max

2.08

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50 V)

140

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