STP9NM40N datasheet(4/18 Pages) STMICROELECTRONICS

4 / 18 page

Electrical characteristics

STD9NM40N, STP9NM40N

4/18

Doc ID 023762 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

400

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 400 V

VDS = 400 V, TC = 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 2.5 A

0.73

0.79

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

365

2.3

Coss(eq)

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance time

VDS = 0 to 50 V, VGS = 0

147.5

Intrinsic gate

resistance

f = 1 MHz, ID=0

5.4

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 320 V, ID = 5.6 A,

VGS = 10 V

(see Figure 17)

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