Drain to Source on State Resistance

SOLID STATE DEVICES, INC.

V

Drain to Source Breakdown Voltage

(VGS =0 V, ID = 250

µA)

-

-

RATING

SYMBOL

MIN

TYP

MAX

UNIT

100

Ω

Ω

Ω

Ω

Ω

-

V

Gate Threshold Voltage

(VDS = VGS, ID = 250

µA)

-

4.0

2

Smho

Forward Transconductance

(VDS > ID(on) X RDS (on) Max, IDS=60% rated ID)

40

-

20

Zero Gate Voltage Drain Current

-

-

-

-

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

-

-

+100

-100

-

-

At rated VGS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10 V

80% rated VDS

Rated ID

Qg

Qgs

Qgd

-

-

-

110

30

50

140

40

80

nsec

Turn on Delay Time

Rise Time

Turn off DelayTime

Fall Time

tr

tf

-

-

-

-

25

15

80

15

40

180

100

40

V

1.0

1.8

-

Diode Reverse Recovery Time

Reverse Recovery Charge

1.25

0.3

200

-

-

IF = ID

di/dt = 100A/

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS =0 Volts

VDS =25 Volts

f =1 MHz

Ciss

Coss

Crss

-

-

-

4100

1200

310

-

-

-

pF

nsec

For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.

A

On State Drain Current

(VDS > ID(on) x RDS(on) Max, VGS = 10 V)

-

-

70

Diode Forvard Voltage

nC

nA

250

250

SFF70N10M

SFF70N10Z

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

NOTES:

1/ Maximum current limited by package, die rated at 70A.

0.025

0.03

VDD =50%

rated VDS

ID=70A

RG=8

Ω

VGS=10V