SOLID STATE DEVICES, INC.

SFF70N10M

SFF70N10Z

FEATURES:

DATA SHEET #: F00247B

MAXIMUM RATINGS

• Rugged construction with poly silicon gate

• Ultra low RDS (on) and high transconductance

• Excellent high temperature stability

• Very fast switching speed

• Fast recovery and superior dv/dt performance

• Increased reverse energy capability

• Low input and transfer capacitance for easy paralleling

• Hermetically sealed package

• TX, TXV and Space Level screening available

•

Replaces: SMM70N10 Types

70 AMP

600 VOLT

0.030

Ω

Ω

Ω

Ω

Ω

N-CHANNEL

POWER MOSFET

DESIGNER'S DATA SHEET

NOTE: All specifications are subject to change without notification.

SCDs for these devices should be reviewed by SSDI prior to release.

Continuous Drain Current

Drain to Source Voltage

100

Amps

Volts

Thermal Resistance, Junction to Case

-55 to +150

Operating and Storage Temperature

.83

CHARACTERISTIC

SYMBOL

VALUE

UNIT

Watts

Total Device Dissipation

150

114

TO-254Z (Z)

TO-254 (M)

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

CASE OUTLINE: TO-254Z (Sufix Z)

CASE OUTLINE: TO-254 (Sufix M)

Available with Glass or Ceramic Seals. Contact Facory for details.

Gate to Source Voltage

+ 20

Volts

Pin Out:

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

Pin Out:

Pin 1: Drain

Pin 2: Source

Pin 3: Gate