Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, CA 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

DESIGNER’S DATA SHEET

SMD.22

SFF110S.22

3.5 A /100 Volts / 0.6

Ω

N-Channel MOSFET Transistor

Features:

• Rugged Construction with Polysilcon Gate

• Small Footprint Hermetic Surface Mount Device with

Excellent Thermal Properties

• Replacement/Enhancement for 2N6782

• TX, TXV, S-Level Screening Available

• Very Fast Switching Characteristics

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

100

Volts

Drain – Gate Voltage

100

Volts

Gate – Source Voltage

+/-20

Volts

Continuous Drain Current

3.5

2.25

Amps

Note 1

Note 2

16.5

0.8

W

Operating & Storage Temperature

Top & Tstg

-55 to +150

ºC

Maximum Thermal Resistance

Junction to Case and to Ambient

7.5 (typ 5)

156.5

ºC/W

PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE

.140

.052

.134 .030

.070

.090

.150

±.007

.220±.007

.005 TYP

.065±.010

1

2

3

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0015A

DOC