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FT0030 Datasheet(PDF) 2 Page - Solid States Devices, Inc

Part # FT0030
Description  Avalanche Rated N-channel MOSFET
PDF  2 Pages
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Manufacturer  SSDI [Solid States Devices, Inc]
Direct Link  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

FT0030 Datasheet(HTML) 2 Page - Solid States Devices, Inc

  FT0030 Datasheet HTML 1Page - Solid States Devices, Inc FT0030 Datasheet HTML 2Page - Solid States Devices, Inc  
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NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0030A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF44N50M
SFF44N50Z
Electrical Characteristics
4/
Symbol
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
VGS = 0V, ID = 250μA
BVDSS
500
530
––
V
Drain to Source On State Resistance
VGS = 10V, ID = 20A, Tj= 25
oC
VGS = 10V, ID = 12A, Tj=125
oC
VGS = 10V, ID = 20A, Tj= 150
oC
RDS(on)
––
––
––
100
230
270
110
––
––
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 1.8mA, Tj= 25
oC
VDS = VGS, ID = 250μA, Tj= 25
oC
VDS = VGS, ID = 250μA, Tj= -55
oC
VDS = VGS, ID = 250μA, Tj= 125
oC
VGS(th)
2.1
––
––
––
3.0
2.7
3.2
1.9
3.9
––
––
––
V
Gate to Source Leakage
VGS = ±20V, Tj= 25
oC
VGS = ±20V, Tj= 125
oC
IGSS
––
––
10
30
±100
––
nA
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V, Tj = 25
oC
VDS = 500V, VGS = 0V, Tj = 125
oC
VDS = 500V, VGS = 0V, Tj = 150
oC
IDSS
––
––
––
0.01
2.0
10
25
––
250
μA
μA
μA
Forward Transconductance
VDS = 10V, ID = 20A, Tj = 25
oC
gfs
10
30
––
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V
VDS = 380V
ID = 32A
Qg
Qgs
Qgd
––
––
––
175
28
80
––
––
––
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
VGS = 10V
VDS = 380V
ID = 32A
RG = 2.7Ω, pw= 3us
td(on)
tr
td(off)
tf
––
––
––
––
30
10
70
10
––
––
––
––
nsec
Diode Forward Voltage
IF = 32A, VGS = 0V
VSD
––
1.0
1.5
V
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 32A, di/dt = 100A/usec
trr
IRM(rec)
Qrr
––
––
––
540
45
12
––
––
––
nsec
A
μC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Ciss
Coss
Crss
––
––
––
4500
540
100
––
––
––
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines / lead bending options / pinout configurations Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25oC.
Available Part Numbers:
Consult Factory
PIN ASSIGNMENT (Standard)
Package
Drain
Source
Gate
TO-254 (M)
Pin 1
Pin 2
Pin 3
TO-254Z (Z)
Pin 1
Pin 2
Pin 3



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