NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0030A

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

TO-254

TO-254Z

Note 1: maximum current limited by package configuration

SFF44N50M

SFF44N50Z

25 AMP , 500 Volts, 110 mΩ

Avalanche Rated N-channel

MOSFET

Features:

•

Rugged poly-Si gate

•

Lowest ON-resistance in the industry

•

Avalanche rated

•

Hermetically Sealed, Isolated Package

•

Low Total Gate Charge

•

Fast Switching

•

TX, TXV, S-Level screening available

•

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

500

V

Gate – Source Voltage

continuous

transient

±20

±30

V

Max. Continuous Drain Current (package limited)

25

12

A

Max. Instantaneous Drain Current (Tj limited)

35

A

Max. Avalanche current

@ L= 0.1 mH

20

A

Single / Repetitive Avalanche Energy

@ L= 0.1 mH

1100 / 1

mJ

Total Power Dissipation

125

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

(Junction to Case)

Rjc

1.0 (typ.0.75)

ºC /W

TO254

(M)

TO254Z

(Z)