NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0037B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF116N10 ___ ___

____

│

│

│

│

│

│

│

│

│

└

│

│

│

│

│

└

└

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

__ = Straight Leads

DB = Down Bend

UB = Up Bend

M = TO-254

Z = TO-254Z

SFF116N10M

SFF116N10Z

116 AMP , 100 Volts, 15 mΩ

Avalanche Rated N-channel

MOSFET

Features:

•

Rugged poly-Si gate

•

Lowest ON-resistance in the industry

•

Avalanche rated

•

Hermetically Sealed, Isolated Package

•

Low Total Gate Charge

•

Fast Switching

•

TX, TXV, S-Level screening available

•

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

100

V

Gate – Source Voltage

continuous

transient

±20

±30

V

Max. Continuous Drain Current (package

limited)

55

A

Max. Instantaneous Drain Current (Tj limited)

116

80

A

Max. Avalanche current

@ L= 0.1 mH

60

A

Single and Repetitive Avalanche Energy

@ L= 0.1 mH

2500

80

mJ

Total Power Dissipation

150

W

Operating & Storage Temperature

-55 to +175

ºC

Maximum Thermal Resistance

(Junction to Case)

1.0

(typ.0.75)

ºC /W

NOTES:

TO-254

TO-254Z

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact

factory.

2/ Screening based on MIL-PRF-19500. Screening flows

available on request.

3/ For package outlines / lead bending options / pinout

configurations - contact factory.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics

@25