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RF2048 Datasheet(PDF) 2 Page - RF Micro Devices |
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RF2048 Datasheet(HTML) 2 Page - RF Micro Devices |
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2 / 10 page ![]() 2 of 10 RF2048 Rev A13 DS070403 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Input RF Power +13 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -60 to +150 °C Parameter Specification Unit Condition Min. Typ. Max. Overall T=25 °C, V D =3.6 V, ICC =40mA Frequency Range DC to 8000 MHz Gain 12.3 dB Freq=100MHz 12.3 dB Freq=1000MHz 10 12.4 dB Freq=2000MHz 12.1 dB Freq=3000MHz 11.6 Freq=4000MHz 11.5 Freq=6000MHz 11.1 Freq=8000MHz Gain Flatness ±0.1 dB 100MHz to 2000MHz Noise Figure 4.5 dB Freq=2000MHz Input VSWR 1.7:1 In a 50 Ω system, DC to 3000MHz 1.4:1 In a 50 Ω system, 3000MHz to 8000MHz Output VSWR 1.5:1 In a 50 Ω system, DC to 3000MHz 1.7:1 In a 50 Ω system, 3000MHz to 8000MHz Output IP 3 25.0 dBm Freq=2000MHz±100kHz, P TONE =-5dBm Output P 1dB 11.1 dBm Freq=2000MHz Reverse Isolation 16.5 dB Freq=2000MHz Thermal I CC =40mA, PDISS = 137 mW (See Note 1.) Theta JC 273 °C/W Maximum Measured Junction Temperature at DC Bias Condi- tions 122 °C Mean Time To Failure (MTTF) 150,000 years T AMB =+85 °C Power Supply With 22 Ω bias resistor, T=+25°C Operating Device Voltage 3.0 3.6 4.0 V At pin 3 with I CC =40mA 3.9 4.5 4.9 At evaluation board connector, ICC=40mA Operating Current 40 mA See Note 2. NOTES: Note 1: The RF2048 must be operated at or below 40mA in order to achieve the thermal performance stated above. Operating at 40mA will ensure the best possible combination of reliability and electrical performance. Note 2: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 40mA over all intended operating condi- tions. Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. How- ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component cir- cuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revi- sion). |
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