L6370Q datasheet(8/17 Pages) STMICROELECTRONICS

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Electrical specifications

L6370Q

8/17

DocID022313 Rev 2

Note:

Vil ≤ 0.8V, Vih ≥ 2V @ (V+In > V-In)

2.4

AC operation

Voth1

Output status threshold 1

voltage

(See Figure 3)

4.555.5

Voth2

Output status threshold 2

voltage

44.5

5.0

Vohys

Output status threshold

hysteresis

300

500

700

Iosd

Output status source current

Vout > Voth1; Vos = 2.5 V

Vosd

Active output status driver drop

voltage

Vs - Vos; Ios = 2 mA

Tamb = 0 to +85 °C

1.5

Ioslk

Output status driver leakage

current

Vout < Voth2; Vos = 0 V

Vs = 9.5 to 35 V

μA

Vdgl

Diagnostic drop voltage

D1 / D2 = L; Idiag= 0.5 mA

D1 / D2 = L; Idiag= 3 mA

250

Idglk

Diagnostic leakage current

D1 / D2 = H; 0 < Vdg < Vs

Vs = 9.5 to 35 V

μA

Source drain NDMOS diode

Vfsd

Forward on voltage

@ Ifsd = 2.5 A

1.5

Ifp

Forward peak current

t = 10 ms; d = 20%

trr

Reverse recovery time

If = 2.5 A di/dt = 25 A/μs

200

tfr

Forward recovery time

100

Thermal characteristics

Θlim

Junction temperature protection

135

150

°C

Θth

Thermal hysteresis

°C

Table 6. AC operation

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

tr - tf

Rise or fall time

Vs = 24 V; RI = 70 Ω; Rl to

ground

μs

Delay time

μs

dV/dt

Slew rate (rise and fall edge)

0.7

1.5

μs

tON

On-time during short-circuit

condition

50 pF < CON < 2 nF

1.28

μs/pF

Table 5. Electrical characteristics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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