NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: SH0049C

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

SSR20C __ __ __ __

│

│

│

│

│

│

│

│

│

│

│

│

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

│

│

│

│

S1 = SMD1

│

│

CT = Centertap

080 = 800 V

100 = 1000 V

120 = 1200 V

SSR20C120CTS1

20 A / 1200 V

Schottky Silicon Carbide

Centertap Rectifier

FEATURES:

 1200 Volt Silicon Carbide Schottky Rectifier

 Average Output Current 20 Amps

 No Reverse Recovery

 No Forward Recovery

 No Switching Time Change Over

Temperature

 Small Package Size

 SMD1: 5.3 gr (typ)

 TX, TXV, and Space Level Screening

Available. Consult Factory.

Symbol

Value

Units

Peak Repetitive and Peak Reverse Voltage

SSR20C080CT

SSR20C100CT

SSR20C120CT

800

1000

1200

Volts

Average Rectified Forward Current

(Resistive Load, 60 Hz, Sine Wave)

Per Leg

Total

10

20

Amps

Peak Surge Current

50

Amps

Operating & Storage Temperature

-55 to +250

Junction Temperature

-55 to +250

Maximum Thermal Resistance

(Junction to Case)

1.0

NOTES:

SMD1 (S)

*Pulse Test: Pulse Width = 300

sec, Duty Cycle = 2%

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25ºC