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IDB31 Datasheet(PDF) 2 Page - General Semiconductor |
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IDB31 Datasheet(HTML) 2 Page - General Semiconductor |
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2 / 3 page ![]() ELECTRICAL CHARACTERISTICS at Tj = 25 ¡C, unless otherwise specified; electrical characteristics applicable in both, forward and reverse direction SYMBOL MIN. TYP. MAX. UNIT Breakover Voltage see Fig. 1 VBO 30 32 34 Volts Breakover Voltage Symmetry see Fig. 1 ½VBO1½-½VBO2½ - - ±2 Volts Dynamic Breakback Voltage (IBO to IF=10mA), see Fig. 1 ½DV½ 5 8 - Volts Output Voltage see Fig. 2 VO 5 - - Volts Breakover Current see Fig. 1 IBO 420 50 mA Rise time see Fig. 3 tr - 100 - ns Leakage current VB=0,5 ·VBO max. IB - - 0.5 mA see Fig. 1 10mA IBO -IF +IF IB VBO VBO1 VBO2 +V -V DV 0.5 FIG. 1 - CURRENT-VOLTAGE CHARACTERISTICS |
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