NTMFD4902NF datasheet(2/10 Pages) ONSEMI

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NTMFD4902NF

http://onsemi.com

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

Drain−to−Source Voltage

Gate−to−Source Voltage

VGS

±20

Gate−to−Source Voltage

Continuous Drain Current RqJA (Note 1)

Steady

State

TA = 25°C

13.5

TA = 85°C

9.7

TA = 25°C

17.5

TA = 85°C

12.6

Power Dissipation

qJA (Note 1)

TA = 25°C

1.90

1.99

Continuous Drain Current RqJA ≤ 10 s (Note 1)

TA = 25°C

18.2

TA = 85°C

13.1

TA = 25°C

TA = 85°C

16.6

Power Dissipation

RqJA ≤ 10 s (Note 1)

TA = 25°C

3.45

Continuous Drain Current

RqJA (Note 2)

TA = 25°C

10.3

TA = 85°C

7.4

TA = 25°C

13.3

TA = 85°C

9.6

Power Dissipation

RqJA (Note 2)

TA = 25 °C

1.10

1.16

Pulsed Drain Current

TA = 25

°C

tp = 10

IDM

Operating Junction and Storage Temperature

TJ, TSTG

−55 to +150

°C

Source Current (Body Diode)

3.4

4.9

Drain to Source dV/dt

dV/dt

6.0

V/ns

Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C,

VDD = 50 V, VGS = 10 V, IL = XX Apk, L = 0.1 mH, RG = 25 W)

24 A

EAS

28.8

27 A

EAS

36.5

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.

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