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TSL262 Datasheet(PDF) 4 Page - ams AG

Part # TSL262
Description  INFRARED LIGHT-TO-VOLTAGE OPTICAL SENSORS
PDF  15 Pages
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Manufacturer  AMSCO [ams AG]
Direct Link  http://www.ams.com
Logo AMSCO - ams AG

TSL262 Datasheet(HTML) 4 Page - ams AG

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TSL260R, TSL261R, TSL262R
INFRARED LIGHT-TO-VOLTAGE OPTICAL SENSORS
TAOS049E −SEPTEMBER 2007
3
The LUMENOLOGY r Company
r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 940 nm, RL = 10 kΩ (unless otherwise noted)
(see Notes 3, 4, and 5)
PARAMETER
TEST
TSL260R
TSL261R
TSL262R
UNIT
PARAMETER
TEST
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
VD
Dark voltage
Ee = 0
0
4
10
0
4
10
0
4
10
mV
VOM
Maximum output
voltage
VDD = 4.5 V
3
3.3
3
3.3
3
3.3
V
Ee = 18 μW/cm2
1
2
3
VO
Output voltage
Ee = 46 μW/cm2
1
2
3
V
VO
Output voltage
Ee = 220 μW/cm2
1
2
3
V
Ee = 18 μW/cm2,
8
mV/°C
Temperature
Ee = 18 μW/cm ,
TA = 0°C to 70°C
0.4
%/°C
Temperature
coefficient of
Ee = 46 μW/cm2,
8
mV/°C
αvo
coefficient of
output voltage
(V )
Ee = 46 μW/cm ,
TA = 0°C to 70°C
0.4
%/°C
pg
(VO)
Ee = 220 μW/cm2,
8
mV/°C
Ee = 220 μW/cm ,
TA = 0°C to 70°C
0.4
%/°C
Ne
Irradiance
responsivity
See Note 6
111
43.5
9.1
mV/(μW/cm2)
Ee = 18 μW/cm2
1.1
1.7
IDD
Supply current
Ee = 46 μW/cm2
1.1
1.7
mA
DD
pp y
Ee = 220 μW/cm2
1.1
1.7
NOTES: 3. Measurements are made with RL = 10 kΩ between output and ground.
4. Optical measurements are made using small-angle incident radiation from an LED optical source.
5. The input irradiance Ee is supplied by a GaAs LED with peak wavelength λp = 940 nm
6. Irradiance responsivity is characterized over the range VO = 0.05 to 2.9 V. The best-fit straight line of Output Voltage VO versus
irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0.
Dynamic Characteristics at TA = 25°C (see Figure 1)
PARAMETER
TEST CONDITIONS
TSL260R
TSL261R
TSL262R
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
tr
Output pulse rise time
VDD = 5 V,
λp = 940 nm
260
70
7
μs
tf
Output pulse fall time
VDD = 5 V,
λp = 940 nm
260
70
7
μs
Vn Output noise voltage
VDD = 5 V,
f = 1000 Hz
Ee = 0,
0.8
0.7
0.6
μV/√Hz



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