Note:

(1) Valid provided that electrodes are kept at ambient temperature

Features

LL4448

SILICON EPITAXIAL PLANAR DIODE

Silicon Epitaxial Planar Diode

fast switching diode in MiniMELF case especially suited for

automatic insertion.

Identical electrically to standard 1N4448

These diode are delivered taped.

Details see “Taping”.

Weight approx. : 0.05g

)

1

Symbols

Values

Units

Reverse voltage

V

R

75

Volts

Peak reverse voltage

V

RM

100

Volts

Rectified current (Average)

Half wave rectification with Resist. Load

at T

and f 50Hz

I

O

mA

Surge forward current at t<1s and T

I

FSM

500

mA

Power dissipation at T

P

tot

mW

Junction Temperature

T

j

175

Storage temperature range

T

S

-65 to +175

DIMENSIONS

DIM

inches

mm

Note

Min.

Max.

Min.

Max.

A

0.134

0.142

3.4

3.6

B

0.055

0.059

1.40

1.50

C

0.008

0.016

0.2

0.4