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IL300 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # IL300
Description  Linear Optocoupler, High Gain Stability, Wide Bandwidth
PDF  11 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IL300 Datasheet(HTML) 3 Page - Vishay Siliconix

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IL300
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 02-Jun-14
3
Document Number: 83622
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Power dissipation
Pdiss
160
mW
Derate linearly from 25 °C
2.13
mW/°C
Forward current
IF
60
mA
Surge current (pulse width < 10 μs)
IPK
250
mA
Reverse voltage
VR
5V
Thermal resistance
Rth
470
K/W
Junction temperature
Tj
100
°C
OUTPUT
Power dissipation
Pdiss
50
mW
Derate linearly from 25 °C
0.65
mW/°C
Reverse voltage
VR
50
V
Thermal resistance
Rth
1500
K/W
Junction temperature
Tj
100
°C
COUPLER
Total package dissipation at 25 °C
Ptot
210
mW
Derate linearly from 25 °C
2.8
mW/°C
Storage temperature
Tstg
-55 to +150
°C
Operating temperature
Tamb
-55 to +100
°C
Isolation test voltage
VISO
> 5300
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
> 1012
VIO = 500 V, Tamb = 100 °C
RIO
> 1011
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT (LED EMITTER)
Forward voltage
IF = 10 mA
VF
1.25
1.50
V
VF temperature coefficient
V
F/°C
-2.2
mV/°C
Reverse current
VR = 5 V
IR
1μA
Junction capacitance
VF = 0 V, f = 1 MHz
Cj
15
pF
Dynamic resistance
IF = 10 mA
V
F/IF
6
OUTPUT
Dark current
Vdet = -15 V, IF = 0 A
ID
125
nA
Open circuit voltage
IF = 10 mA
VD
500
mV
Short circuit current
IF = 10 mA
ISC
70
μA
Junction capacitance
VF = 0 V, f = 1 MHz
Cj
12
pF
Noise equivalent power
Vdet = 15 V
NEP
4 x 10-14
W/
Hz
COUPLER
Input-output capacitance
VF = 0 V, f = 1 MHz
1
pF
K1, servo gain (IP1/IF)IF = 10 mA, Vdet = -15 V
K1
0.0050
0.007
0.011
Servo current (1)(2)
IF = 10 mA, Vdet = -15 V
IP1
70
μA
K2, forward gain (IP2/IF)IF = 10 mA, Vdet = -15 V
K2
0.0036
0.007
0.011
Forward current
IF = 10 mA, Vdet = -15 V
IP2
70
μA
K3, transfer gain (K2/K1) (1)(2)
IF = 10 mA, Vdet = -15 V
K3
0.56
1
1.65
K2/K1



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