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IRFZ44ES Datasheet(PDF) 2 Page - International Rectifier |
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IRFZ44ES Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFZ44ES/L 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V trr Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 29A Qrr Reverse Recovery Charge ––– 177 266 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 48 192 A Starting TJ = 25°C, L = 520µH RG = 25Ω, IAS = 29A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: I SD ≤ 29A, di/dt ≤ 320A/µs, V DD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ44E data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.063 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.023 Ω VGS = 10V, ID = 29A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 15 ––– ––– S VDS = 30V, ID = 29A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 60 ID = 29A Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 30V tr Rise Time ––– 60 ––– ID = 29A td(off) Turn-Off Delay Time ––– 70 ––– RG = 15Ω tf Fall Time ––– 70 ––– RD = 1.1Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 1360 ––– VGS = 0V Coss Output Capacitance ––– 420 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance |
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