IRFZ44ES/L

PD - 9.1714

11/18/97

Parameter

Max.

Units

48

34

A

Pulsed Drain Current

192

Power Dissipation

110

W

Linear Derating Factor

0.71

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

220

mJ

Avalanche Current



29

A

Repetitive Avalanche Energy



11

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.4

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

www.irf.com

1

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide variety of

applications.

sizes up to HEX-4. It provides the highest power capability and the lowest

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ44EL) is available for low-profile applications.

Description

2

D

Pak

TO -26 2

S

D

G

PRELIMINARY