ST3426

N Channel Enhancement Mode MOSFET

3.0A

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stnasontech.com

STN3426 2014. V1

1

DESCRIPTION

The ST3426 is the N-Channel logic enhancement mode power field effect transistor is

produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance. These

devices are particularly suited for low voltage application such as cellular phone and

notebook computer power management and other battery powered circuits where high

side switching

.

PIN CONFIGURATION

SOT-23

1.Gate

2.Source

3.Drain

PART MARKING

SOT-23

Y: Year Code

A: Process Code

FEATURE

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Super high density cell design for

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Exceptional on-resistance and maximum

DC current capability

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SOT-23 package design

3

1

2

D

G

S