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ST3426 Datasheet(PDF) 3 Page - Stanson Technology

Part # ST3426
Description  N Channel Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST3426 Datasheet(HTML) 3 Page - Stanson Technology

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ST3426
N Channel Enhancement Mode MOSFET
3.0A
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3426 2014. V1
3
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250uA
60
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
1
2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±
100
nA
Zero Gate Voltage Drain
Current
IDSS
VDS=48V,VGS=0V
1
uA
VDS=48V,VGS=0V
TJ=55℃
5
Drain-source On-Resistance
RDS(on)
VGS=10V,ID=4.0A
VGS=4.5V,ID=3.0A
80
100
90
110
mΩ
Forward Transconductance
gfs
VDS=4.5V,ID=3A
10
S
Diode Forward Voltage
VSD
IS=1.2A,VGS=0V
1.1
V
Dynamic
Total Gate Charge
Qg
VDS=15V
VGS=10V
ID≡6.7A
7
nC
Gate-Source Charge
Qgs
1.2
Gate-Drain Charge
Qgd
3.0
Input Capacitance
Ciss
VDS=15V
VGS=0V
F=1MHz
410
pF
Output Capacitance
Coss
200
Reverse Transfer Capacitance
Crss
26
Turn-On Time
td(on)
tr
VDD=15V
RL=15Ω
ID=1.0A
VGEN=10V
RG=6Ω
6.0
11
nS
8
18
Turn-Off Time
td(off)
tf
16
29
9
18



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