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STC4567 Datasheet(PDF) 3 Page - Stanson Technology

Part # STC4567
Description  N&P Pair Enhancement Mode MOSFET
PDF  8 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STC4567 Datasheet(HTML) 3 Page - Stanson Technology

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STC4567
N&P Pair Enhancement Mode MOSFET
10A / -10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=10mA
VGS=0V,ID=-10mA
N
P
40
-40
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250 uA
VDS=VGS,ID=-250uA
N
P
0.5
-0.8
1.0
-2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=0V,VGS=±20V
N
P
±
100
±
100
nA
VDS=36V,VGS=0V
VDS=-36V,VGS=0V
N
P
1
-1
Zero Gate Voltage Drain
Current
IDSS
TJ=55℃
VDS=32V,VGS=0V
VDS=-32V,VGS=0V
N
P
5
-5
uA
On-State Drain Current
ID(on)
VDS≧5V,VGS=10V
VDS≦-5V,VGS=-10V
N
P
10
-10
A
VGS=10V, ID=6.0A
VGS=-10V,ID=-7.2A
N
P
0.048
0.093
Drain-source On-Resistance RDS(on)
VGS=4.5V, ID=5.0A
VGS=-4.5V,ID=-5.0 A
N
P
0.058
0.103
Ω
Forward Tran Conductance
gfs
VDS=15V,ID=6.9A
VDS=-15V,ID=-5.9A
N
P
22
13
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V
IS=-1.7A,VGS=0V
N
P
1.2
-1.0
V
Dynamic
Total Gate Charge
Qg
N
P
16
9
24
12
Gate-Source Charge
Qgs
N
P
3
1.5
Gate-Drain Charge
Qgd
N-Channel
VDS=15V,VGS=10V
ID≣2.0A
P-Channel
VDS=-15V,VGS=-10V
ID≣-3.5A
N
P
2.3
2.0
nC
N
P
4.6
8
6.0
20
Turn-On Time
td(on)
tr
N
P
3.1
10
4
20
N
P
15.6
30
21
34
Turn-Off Time
td(off)
tf
N-Channel
VDS=15V,RL=15Ω
ID=1A,RGEN=6Ω
VGEN=10V
P-Channel
VDS=-15V,RL=15Ω
ID=-1A,RGEN=-6Ω
VGEN=10V
N
P
3.0
25
4.0
20
nS



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