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STP601 Datasheet(PDF) 1 Page - Stanson Technology |
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STP601 Datasheet(HTML) 1 Page - Stanson Technology |
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1 / 7 page ![]() STP601 / STP601D P Channel Enhancement Mode MOSFET - 30A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP601 / STP601D 2010. V1 DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING Y: Year Code A: Week Code Q: Process Code FEATURE -60V/-20.0A, RDS(ON) = 20m (typ.) @VGS = -10V -60V/-20.0A, RDS(ON) = 27m @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design ( STP601D ) ( STP610 ) |
Similar Part No. - STP601 |
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Similar Description - STP601 |
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