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STP601 Datasheet(PDF) 3 Page - Stanson Technology

Part # STP601
Description  P Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP601 Datasheet(HTML) 3 Page - Stanson Technology

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STP601 / STP601D
P Channel Enhancement Mode MOSFET
-
30A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP601 / STP601D 2010. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-60
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=-250uA
-1.0
-3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=-48V,VGS=0V
-1
uA
VDS=-48V,VGS=0V
TJ=55℃
-5
On-State Drain
Current
ID(on)
VDS≧-10V,VDS=-5V
-30
A
Drain-source On-
Resistance
RDS(on)
VGS=-10V,ID=-20A
VGS=-4.5V,ID=-20A
20
27
30
40
m
Forward
Transconductance
gfs
VDS=-50V,ID=-7.8A
33
S
Diode Forward Voltage
VSD
IS=-7.8A,VGS=0V
-1.2
V
Dynamic
Total Gate Charge
Qg
VDS=-30V,VGS=-10V
ID=-20A
58
nC
Gate-Source Charge
Qgs
23
Gate-Drain Charge
Qgd
10
Input Capacitance
Ciss
VDS =-30V,VGS=0V
F=1MHz
3600
pF
Output Capacitance
Coss
240
Reverse
TransferCapacitance
Crss
153
Turn-On Time
td(on)
tr
VGS=-10V,VDS=-30V
RD=3 ,RG=1.5
12
nS
15
Turn-Off Time
td(off)
tf
38
15



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