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HAT2016R Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HAT2016R Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 10 page ![]() HAT2016R 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 30 V Gate to source voltage V GSS ±20 V Drain current I D 6.5 A Drain peak current I D(pulse) Note1 52 A Body-drain diode reverse drain current I DR 6.5 A Channel dissipation Pch Note2 2W Channel dissipation Pch Note3 3W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s |
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