SSF2649 datasheet(1/6 Pages) SILIKRON

Part #	SSF2649

Description	Advanced trench MOSFET process technology

PDF	6 Pages

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Manufacturer	SILIKRON [Silikron Semiconductor Co.,LTD.]

Direct Link	http://www.silikron.com

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SSF2649

Main Product Characteristics:

©Silikron Semiconductor CO., LTD.

2011.05.25

Version: 1.0

page 1 of 6

www.silikron.com

VDSS

-20V

RDS(on) 49mohm(typ.)

ID

-7.9A

G1

D1

D2

G2

S1

S2

Marking and pin

Assignment

Schematic diagram

SOP-8

Features and Benefits:

Advanced trench MOSFET process technology

Special designed for PWM, load switching and

general purpose applications

Ultra low on-resistance with low gate charge

Fast switching and reverse body recovery

150℃ operating temperature

Description:

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient and reliable device for use in power switching application and a wide variety of other applications

Absolute max Rating:

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±10

V

ID

-7.9

A

Drain Current-Continuous@ Current-Pulsed (Note 1)

IDM

-30

A

Maximum Power Dissipation

PD

5

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Resistance

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

85

℃

/W

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SSF2649 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD.

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