SSF2649 datasheet(2/6 Pages) SILIKRON

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SSF2649

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ.

Max.

Units

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

±100

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.7

-3.0

VGS=-4.5V, ID =-2.9A

Drain-Source On-State Resistance

RDS(ON)

VGS=-2.7V, ID =-1.5A

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-5.3A

Input Capacitance

Clss

1040

Output Capacitance

Coss

156

Reverse Transfer Capacitance

Crss

VDS=-20V,VGS=0V,

F=1.0MHz

112

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-10V, ID =-1A

VGS=-4.5V,RGEN=6Ω

Total Gate Charge

Gate-Source Charge

Qgs

2.7

Gate-Drain Charge

Qgd

VDS=-10V,

ID=-4.7A,VGS=-4.5V

1.5

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

-7.9

ISM

Pulsed Source Current

(Body Diode)

—

-30

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Diode Forward Voltage

—

-1

IS=-2.9A, VGS=0V

2011.07.17

Version: 1.0

page 2 of 6

www.silikron.com

NOTES:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production testing.

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