SSF4607D datasheet(1/9 Pages) SILIKRON

Part #	SSF4607D

Description	Advanced trench MOSFET process technology

PDF	9 Pages

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Manufacturer	SILIKRON [Silikron Semiconductor Co.,LTD.]

Direct Link	http://www.silikron.com

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1 / 9 page

SSF4607D

©Silikron Semiconductor CO.,LTD.

2012.03.22

Version : 1.0

page 1 of 9

www.silikron.com

Main Product Characteristics:

VDSS

-30V

RDS(on)

19m

Ω(typ.)

ID

-25A ①

Features and Benefits:

Description:

Absolute Max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V(Silicon Limited)

-25 ①

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

-20 ①

IDM

Pulsed Drain Current ②

-60

PD @TC = 25°C

Power Dissipation

41

W

VDS

Drain-Source Voltage

-30

V

VGS

Gate-to-Source Voltage

±20

V

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case③

—

3

℃/W

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

25

℃/W

Junction-to-Ambient (PCB mounted, steady-state) ④

—

50

℃/W

Marking and pin

Assignment

Schematic diagram



Advanced trench MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



150℃ operating temperature

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient and reliable device for use in power switching application and a wide variety of other applications.

TO-252

D

G

S

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