SSF4607D datasheet(2/9 Pages) SILIKRON

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SSF4607D

©Silikron Semiconductor CO.,LTD.

2011.03.22

Version : 1.0

page 2 of 9

www.silikron.com

Electrical Characterizes @T

A=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-30

—

VGS = 0V, ID = -250μA

RDS(on)

Static Drain-to-Source on-resistance

—

mΩ

VGS=-10V,ID = -6A

—

VGS=-4.5V,ID=-5A

VGS(th)

Gate threshold voltage

-1.2

—

-2.4

VDS = VGS, ID = -250μA

—

-1.4

—

TJ = 125℃

IDSS

Drain-to-Source leakage current

—

-1

μA

VDS = -24V,VGS = 0V

IGSS

Gate-to-Source forward leakage

—

100

VGS =20V

—

-100

VGS = -20V

Total gate charge

—

ID = -20A,

VDS=-25V,

VGS = -10V

Qgs

Gate-to-Source charge

—

3.6

—

Qgd

Gate-to-Drain("Miller") charge

—

9.1

—

td(on)

Turn-on delay time

—

10.7

—

VGS=-10V, VDS =-15V,

RL=0.75Ω,ID =-20A

Rise time

—

td(off)

Turn-Off delay time

—

25.8

—

Fall time

—

6.4

—

Ciss

Input capacitance

—

1188

—

VGS = 0V,

VDS =-15V,

ƒ = 1MHz

Coss

Output capacitance

—

173

—

Crss

Reverse transfer capacitance

—

139

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

-25①

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

-100

Diode Forward Voltage

—

-0.77

-1

IS=-1A, VGS=0V

trr

Reverse Recovery Time

—

TJ = 25°C, IF =-20A, di/dt =

100A/μs

Qrr

Reverse Recovery Charge

—

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