Supertex inc.

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

TN0106

Features

Applications

General Description

This low threshold, enhancement-mode (normally-off) transistor

utilizes a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination produces

a device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low

input capacitance, and fast switching speeds are desired.

N-Channel Enhancement-Mode

Vertical DMOS FET

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

BV

DSS

Drain-to-gate voltage

BV

DGS

Gate-to-source voltage

±20V

Operating and storage temperature

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-92 (N3)

GATE

SOURCE

DRAIN

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiTN

0106

YYWW

TO-92 (N3)

Product Marking

Package may or may not include the following marks: Si or

Pin Configurations

Ordering Information

Device

Package

Wafer / Die Options

TO-92

NW

(Die in wafer form)

NJ

(Die on adhesive tape)

ND

(Die in waffle pack)

TN0106

TN0106N3-G

TN1506NW

TN1506NJ

TN1506ND

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specification VF15 for layout and dimensions.

Product Summary

Device

BV

(V)

R

DS(ON)

(max)

(Ω)

I

D(ON)

(min)

(A)

V

GS(th)

(max)

(V)

TN0106N3-G

60

3.0

2.0

2.0