Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

TN0106 Datasheet(PDF) 2 Page - Supertex, Inc

Part # TN0106
Description  N-Channel Enhancement-Mode Vertical DMOS FET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TN0106 Datasheet(HTML) 2 Page - Supertex, Inc

  TN0106 Datasheet HTML 1Page - Supertex, Inc TN0106 Datasheet HTML 2Page - Supertex, Inc TN0106 Datasheet HTML 3Page - Supertex, Inc TN0106 Datasheet HTML 4Page - Supertex, Inc TN0106 Datasheet HTML 5Page - Supertex, Inc  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
2
TN0106
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
Electrical Characteristics (T
A = 25
O
C unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units Conditions
BV
DSS
Drain-to-source breakdown voltage
60
-
-
V
V
GS = 0V, ID = 1.0mA
V
GS(th)
Gate threshold voltage
0.6
-
2.0
V
V
GS = VDS, ID= 0.5mA
ΔV
GS(th)
Change in V
GS(th) with temperature
-
-3.2
-5.0 mV/OC V
GS = VDS, ID= 1.0mA
I
GSS
Gate body leakage
-
-
100
nA
V
GS = ± 20V, VDS = 0V
I
DSS
Zero Gate voltage drain current
-
-
10
µA
V
GS = 0V, VDS = Max Rating
-
-
500
V
DS = 0.8 Max Rating,
V
GS = 0V,TA = 125°C
I
D(ON)
On-state drain current
0.75
1.4
-
A
V
GS = 5.0V, VDS = 25V
2.0
3.4
-
V
GS = 10V, VDS = 25V
R
DS(ON)
Static drain-to-source on-state resistance
-
2.0
4.5
Ω
V
GS = 4.5V, ID = 250mA
-
1.6
3.0
V
GS = 10V, ID = 500mA
ΔR
DS(ON)
Change in R
DS(ON) with temperature
-
0.6
1.1
%/OC V
GS = 10V, ID = 500mA
G
FS
Forward transductance
225
400
-
mmho V
DS = 25V, ID = 500mA
C
ISS
Input capacitance
-
50
60
pF
V
GS = 0V,
V
DS = 25V,
f = 1.0MHz
C
OSS
Common source output capacitance
-
25
35
C
RSS
Reverse transfer capacitance
-
4.0
8.0
t
d(ON)
Turn-on delay time
-
2.0
5.0
ns
V
DD = 25V,
I
D = 1.0A,
R
GEN = 25Ω
t
r
Rise time
-
3.0
5.0
t
d(OFF)
Turn-off delay time
-
6.0
7.0
t
f
Fall time
-
3.0
6.0
V
SD
Diode forward voltage drop
1.0
1.5
V
V
GS = 0V, ISD = 500mA
t
rr
Reverse recovery time
-
400
-
ns
V
GS = 0V, ISD = 500mA
Notes:
1.
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Notes:
† I
D (continuous) is limited by max rated Tj .
Thermal Characteristics
Package
I
D
(continuous)†
(mA)
I
D
(pulsed)
(A)
Power Dissipation
@T
C = 25
O
C
(W)
θ
jc
(OC/W)
θ
ja
(OC/W)
I
DR
†
(mA)
I
DRM
(A)
TO-92
350
2.0
1.0
125
170
350
2.0
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
Pulse
Generator
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com