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ECH8601R Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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ECH8601R Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 4 page ![]() Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 425 ns Rise Time tr See specified Test Circuit. 1500 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 4000 ns Fall Time tf See specified Test Circuit. 2860 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=6.5A 26.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=6.5A 1.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=6.5A 5.1 nC Diode Forward Voltage VSD IS=6.5A, VGS=0V 0.75 1.2 V Package Dimensions Electrical Connection unit : mm 7011-003 Switching Time Test Circuit 1 4 85 0.15 0.65 2.9 0.3 Top View Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 PW=10 µs D.C. ≤1% P.G 50 Ω Rg Rg=1k Ω G S D ID=3.5A RL=2.86Ω VDD=10V VOUT ECH8601R VIN 4V 0V VIN 87 6 5 123 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view SMD Type Mosfets Mos Mosfets Mos |
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