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ECH8601R Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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ECH8601R Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 4 page  Features • Low ON-resistance. • Built-in gate protection resistor. • 2.5V drive. • Best suited for LiB charging and discharging Switch. • Common-drain type. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 6.5 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 40 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2!0.8mm) 1unit 1.4 W Total Dissipation PT Mounted on a ceramic board (900mm2!0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 20 V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.5 1.3 V Forward Transfer Admittance yfs VDS=10V, ID=3.5A 7.0 10 S RDS(on)1 ID=4A, VGS=4.5V 17 23 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=4A, VGS=4.0V 18 24 m Ω RDS(on)3 ID=4A, VGS=3.1V 20 30 m Ω RDS(on)4 ID=2A, VGS=2.5V 24 35 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 1140 pF Output Capacitance Coss VDS=10V, f=1MHz 420 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 190 pF ECH8601R N-Channel Silicon MOSFET General-Purpose Switching Device Applications SMD Type Mosfets Mos Mosfets Mos |
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