SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N0249, Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

HD860

Ordering Information:

Device

Package

Shipping

HD860

DPAK

(Pb-Free)

2500pcs / reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification.

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

HD860

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

600

V

RMS Reverse Voltage

420

V

Average Rectified Output Current

Io

8.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

110

A

1.7

V

Peak Reverse Current

At Rated DC Blocking Voltage

5.0

50

µA

Maximum Reverse Recovery Time (Note 1)

Trr

50

ns

Max. Voltage Rate of Change

dv/dt

10,000

V/µs

Typical Thermal Resistance Junction to Ambient

(Note 2)

25

K/W

Storage Temperature Range

-55 to +150

°C

Case Style

DPAK

Note:

1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

2. Mount on Cu-Pad Size 16mm×16mm on P.C.B.