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MBR330FL Datasheet(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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MBR330FL Datasheet(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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3 / 5 page ![]() SANGDEST MICROELECTRONICS Technical Data Data Sheet N1555, Rev. - • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn • MBR330FL Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM VRWM VR 30 V Maximum Average Rectified Forward Current at TA = 75°C IF(AV) 3 A Forward Voltage @IF = 3A,TA = 25°C VFM 0.50 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 20 mA Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 80 A Maximum Junction Capacitance (Note 1) Cj 160 pF Typical thermal resistance (Note 2) RΘJA RΘJC 110 40 °C/W Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -65 to +175 °C Case Style SOD-123-FL Note1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. 8.0mm²(.013mm thick) land areas |
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