 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
HMMC-5021 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard) |
|
|
|||||||||||||||||||||||||||||
HMMC-5021 Datasheet(HTML) 3 Page - Agilent(Hewlett-Packard) |
|
|
3 / 6 page  6-30 Applications The HMMC-5021/22/26 series of traveling wave amplifiers are designed for use as general purpose wideband gain blocks in communication systems and microwave instrumentation. They are ideally suited for broadband applications requiring a flat gain response and excellent port matches over a 2 to 26.5 GHz frequency range. Dynamic gain control and low-frequency extension capabilities are de- signed into these devices. Biasing and Operation These amplifiers are biased with a single positive drain supply (VDD) and a single negative gate supply (VG1). The recommended bias conditions for the HMMC-5021/22/26 are VDD = 7.0V, IDD = 150 mA for best overall performance. To achieve this drain current level, VG1 is typi- cally biased between -0.2V and -0.5V. No other bias supplies or connections to the device are required for 2 to 26.5 GHz opera- tion. See Figure 3 for assembly information. The auxiliary gate and drain contacts are used only for low- frequency performance extension below ≈ 1.0 GHz. When used, these contacts must be AC coupled only. (Do not attempt to apply bias to these pads.) The second gate (VG2) can be used to obtain 35 dB (typical) dynamic gain control. For normal operation, no external bias is required on this contact and its self-bias voltage is ≈ +2.1 V. Applying an external bias between its open-circuit voltage and -2.5 volts will adjust the gain while maintaining a good input/output port match. Assembly Techniques Solder die-attach using a fluxless AuSu solder preform is the recommended assembly method. Gold thermosonic wedge bonding with 0.7 mil diameter Au wire is recommended for all bonds. Tool force should be 22 ± 1 gram, stage temperature should be 150 ± 2°C, and ultrasonic power and dura- tion should be 64 ± 1 dB and 76 ± 8msec,respectively.The bonding pad and chip backside metallization is gold. For more detailed information see HP application note #999, “GaAs MMIC Assembly and Handling Guidelines.” GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. Figure 1. HMMC-5021/22/26 Schematic. Aux. Drain Drain Bias (VDD) RF Input Single Stage Shown Temp Diode Sense Temp Diode Force First Gate Bias (VG1) Second Gate Bias (VG2) RF Output Aux. Gate Note: FET gate periphery in microns. Seven Identical Stages 124 124 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
