HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : Preliminary Data

Issued Date : 1998.12.01

Revised Date : 2000.10.01

Page No. : 1/4

HSMC Product Specification

HD122

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Description

The HD122 is designed for medium power linear and switching

applications.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -50 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) .................................................................................... 40 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage .................................................................................... 100 V

BVCEO Collector to Emitter Voltage................................................................................. 100 V

BVEBO Emitter to Base Voltage ........................................................................................... 5 V

IC Collector Current .............................................................................................................. 4 A

IC Collector Current (Pulse) .............................................................................................. 0.1 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

100

-

-

V

IC=1mA

*BVCEO

100

-

-

V

IC=100mA

BVEBO

5

-

-

V

IE=100uA

ICEO

-

-

2

mA

VCE=50V

ICBO

-

-

1

mA

VCB=100V

IEBO

-

-

2

mA

VBE=5V

*VCE(sat)1

-

-

2.5

V

IC=1.5A, IB=30mA

*VCE(sat)2

-

-

2.8

V

IC=2A, IB=40mA

*VBE(on)

-

-

2.5

V

IC=3A, VCE=3V

*hFE1

1000

-

-

IC=0.5A, VCE=3V

*hFE2

1000

-

-

IC=3A, VCE=3V

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%