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STL10N3LLH5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL10N3LLH5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() August 2011 Doc ID 022093 Rev 1 1/14 14 STL10N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ 3.3x3.3 STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Applications ■ Switching applications ■ Automotive Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STL10N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ 3.3x3.3 12 3 4 SS S G 87 6 5 DD D D BOTTOM VIEW AM10124V1 Table 1. Device summary Order code Marking Package Packaging STL10N3LLH5 10N3L PowerFLAT™ 3.3x3.3 Tape and reel www.st.com |
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