STL10N3LLH5 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STL10N3LLH5

4/14

Doc ID 022093 Rev 1

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V,

VDS = 30 V, TC = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 22 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

12.5

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 4.5 A

VGS= 4.5 V, ID= 4.5 A

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

724

132

900 (1)

165 (1)

25 (1)

Max values not tested

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 9 A

VGS =4.5 V

(see Figure 14)

6 (1)

2.5 (1)

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

Open drain

-3.3

Table 7.

Switching times (1)

Max values not tested

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=15 V, ID= 4.5 A,

RG=4.7 Ω, VGS= 10 V

(see Figure 13)

4.2

3.5

5.2

4.25

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