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GL6551 Datasheet(PDF) 3 Page - Hynix Semiconductor |
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GL6551 Datasheet(HTML) 3 Page - Hynix Semiconductor |
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3 / 5 page ![]() GL 6551 3 Electrical Characteristics Ta=25¡ É , Vcc=3.0V, f=1kHz, R1=10k Ω SPEC. PARAMETER SYMBOL MIN TYP MAX UNIT CONDITION Current Dissipation Icc - 4.0 6.5 mA No Signal Threshold Voltage Vth 0.9 1.15 1.30 V 11, 12, 13 Pin Compressor Input impedance Zinc 90 120 - K Ω Input Reference Level Vinc 8 12.5 17 mVrms Voc=30mVrms, Vin=0dB ∗ Gain Deviation (1) ∆Gc1 -0.5 0 0.5 dB Vin=-20dB ∗ Gain Deviation (2) ∆Gc2 -1.0 0 1.0 dB Vin=-40dB ∗ Through ON OFF Diff. ∆Gtc -1.5 0 1.5 dB Vin=-0dB, Pin12=0V ∗ T.H.D THDc - 0.5 1.0 % Vin=0dB Output Noise Voltage Vnc - 3.0 5.5 mVrms Rg=620 Ω ∗ Mute Attenuation Attc 60 80 - dB Vin=0dB, Pin11=0V ∗ Limiting Voltage Vlimc 1.15 1.35 1.5 Vp-p Data Pin Voltage Gain Gdata -0.5 0 0.5 dB Pin4=300mVrms Data Pin Max. Output VDmax 800 900 - mVrms THD=10% Point Cross Talk CTc - -35 -30 dB ExpVin=30mVrms,Rg=620 Ω∗ Buffer Amp (LPF) Voltage Gain Gb -0.5 0 0.5 dB Vin=300mVrms Freq. Charact (1) ∆f1 - -3 - dB Vin=300mVrms, f=3kHz Freq. Charact (2) ∆f2 - -60 - dB Vin=300mVrms, f=30kHz T.H.D. THDb - 0.02 0.1 % Vin=300mVrms Maximum Output Voltage VBmax 550 700 - mVrms THD=10% Point Expander Output Reference Volt. Voe 110 130 160 mVrms Vin=300mVrms=0dB ∗ Gain Deviation (1) ∆Ge1 -0.5 0 0.5 DB Vin=-10dB ∗ Gain Deviation (2) ∆Ge2 -1.0 0 1.0 DB Vin=-20dB ∗ Gain Deviation (3) ∆Ge3 -1.5 0 2.0 DB Vin=-30dB ∗ Through ON OFF Diff. ∆Gte -2.5 -1 0.5 DB Vin=0dB , Pin12=0V ∗ T.H.D THDe - 0.5 1.5 % Vin=0dB Output Noise Voltage Vne - 10 30 uVrms Rg=620 Ω ∗ Mute Attenuation VEmax 60 80 - DB Vin=0dB, Pin13=0V ∗ Maximum Output Voltage Gi 700 800 - mVrms THD 10% Point Input Amp Voltage Gain VImax 14.5 15.5 16.5 DB Vin=0dB Input Amp Max. Voltage CTe 450 500 - mVrms THD=10% Point Cross Talk - -70 -60 DB CompVin=Vinc,Rg=620 Ω ∗ ∗ Measured by Noise Filter (CCITT Recommandation P. 53) |
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