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GL6551 Datasheet(PDF) 3 Page - Hynix Semiconductor

Part # GL6551
Description  COMPANDER
PDF  5 Pages
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

GL6551 Datasheet(HTML) 3 Page - Hynix Semiconductor

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GL 6551
3
Electrical Characteristics
Ta=25¡ É
, Vcc=3.0V, f=1kHz, R1=10k
SPEC.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITION
Current Dissipation
Icc
-
4.0
6.5
mA
No Signal
Threshold Voltage
Vth
0.9
1.15
1.30
V
11, 12, 13 Pin
Compressor
Input impedance
Zinc
90
120
-
K
Input Reference Level
Vinc
8
12.5
17
mVrms
Voc=30mVrms, Vin=0dB
Gain Deviation (1)
∆Gc1
-0.5
0
0.5
dB
Vin=-20dB
Gain Deviation (2)
∆Gc2
-1.0
0
1.0
dB
Vin=-40dB
Through ON OFF Diff.
∆Gtc
-1.5
0
1.5
dB
Vin=-0dB, Pin12=0V
T.H.D
THDc
-
0.5
1.0
%
Vin=0dB
Output Noise Voltage
Vnc
-
3.0
5.5
mVrms
Rg=620
Mute Attenuation
Attc
60
80
-
dB
Vin=0dB, Pin11=0V
Limiting Voltage
Vlimc
1.15
1.35
1.5
Vp-p
Data Pin Voltage Gain
Gdata
-0.5
0
0.5
dB
Pin4=300mVrms
Data Pin Max. Output
VDmax
800
900
-
mVrms
THD=10% Point
Cross Talk
CTc
-
-35
-30
dB
ExpVin=30mVrms,Rg=620
Buffer Amp (LPF)
Voltage
Gain
Gb
-0.5
0
0.5
dB
Vin=300mVrms
Freq. Charact (1)
∆f1
-
-3
-
dB
Vin=300mVrms, f=3kHz
Freq. Charact (2)
∆f2
-
-60
-
dB
Vin=300mVrms, f=30kHz
T.H.D.
THDb
-
0.02
0.1
%
Vin=300mVrms
Maximum Output Voltage
VBmax
550
700
-
mVrms
THD=10% Point
Expander
Output Reference Volt.
Voe
110
130
160
mVrms
Vin=300mVrms=0dB
Gain Deviation (1)
∆Ge1
-0.5
0
0.5
DB
Vin=-10dB
Gain Deviation (2)
∆Ge2
-1.0
0
1.0
DB
Vin=-20dB
Gain Deviation (3)
∆Ge3
-1.5
0
2.0
DB
Vin=-30dB
Through ON OFF Diff.
∆Gte
-2.5
-1
0.5
DB
Vin=0dB , Pin12=0V
T.H.D
THDe
-
0.5
1.5
%
Vin=0dB
Output Noise Voltage
Vne
-
10
30
uVrms
Rg=620
Mute Attenuation
VEmax
60
80
-
DB
Vin=0dB, Pin13=0V
Maximum Output Voltage
Gi
700
800
-
mVrms
THD 10% Point
Input Amp Voltage Gain
VImax
14.5
15.5
16.5
DB
Vin=0dB
Input Amp Max. Voltage
CTe
450
500
-
mVrms
THD=10% Point
Cross Talk
-
-70
-60
DB
CompVin=Vinc,Rg=620
Measured by Noise Filter (CCITT Recommandation P. 53)



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