BFS540_2015 datasheet(3/12 Pages) JMNIC

3 / 12 page

2000 May 30

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFS540

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero and

2. IC = 40 mA; VCE = 8 V; RL =50 Ω; f = 900 MHz; Tamb =25 °C;

fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

Ts ≤ 80 °C; note 1

190

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCE =8V

−−

hFE

DC current gain

IC = 40 mA; VCE = 8 V

100

120

250

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

collector capacitance

IE =ie = 0; VCB = 8 V; f = 1 MHz

−

0.9

−

Cre

feedback capacitance

IC = 0; VCB = 8 V; f = 1 MHz

−

0.6

−

transition frequency

IC = 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral power gain

(note 1)

IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

IC = 40 mA; VCE = 8 V; f = 2 GHz;

Tamb =25 °C

−

21|

insertion power gain

IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

noise ﬁgure

s = Γopt;IC = 10 mA; VCE =8V;

f = 900 MHz; Tamb =25 °C

−

1.3

1.8

s = Γopt;IC = 40 mA; VCE =8V;

f = 900 MHz; Tamb =25 °C

−

1.9

2.4

s = Γopt;IC = 10 mA; VCE =8V;

f = 2 GHz; Tamb =25 °C

−

2.1

−

PL1

output power at 1 dB gain

compression

Ic = 40 mA; VCE =8V; RL =50 Ω;

f = 900 MHz; Tamb =25 °C

−

dBm

ITO

third order intercept point

note 2

−

dBm

10 log

–

() 1s

–

()

--------------------------------------------------------

dB.

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