SST213 datasheet(4/6 Pages) TEMIC

4 / 6 page

SD211DE/SST211 Series

Siliconix

S-51850—Rev. F, 14-Apr-97

Typical Characteristics

Leakage Current vs. Applied Voltage

On-Resistance vs. Temperature

Threshold Voltage vs. Temperature

On-Resistance vs. Gate-Source Voltage

Common-Source Forward Transconductance

vs. Drain Current

Applied Voltage (V)

020

ISBO

IGSS (Diode)

ID (off) @ VGS = VBG = –5 V

IS(off) @ VGD = VBD = –5V

ISBO @ VGB = 0 V, Drain Open

10 nA

1 nA

100 pA

10 pA

1 pA

IS(off)

300

240

180

120

5 V

10 V

VGS = 4 V

100

VDS = 15 V

VBS = 0 V

TA = 55_C

125

100

–60

–20

100

140

10 V

15 V

20 V

–60

100

–20

140

–5 V

–1 V

0 V

VGS = VDS = VTH

ID = 1 mA

VBS = –10 V

ID = 5 mA, VBS = 0 V

TA – Temperature (_C)

ID – Drain Current (mA)

VGS = 5 V

Output Conductance vs. Drain Current

1.0

020

0.8

0.6

0.4

0.2

VDS = 5 V

15 V

VBS = 0 V

f = 1 kHz

ID – Drain Current (mA)

812

VSB – Body-Source Voltage (V)

ID(off)

10 V

–0.5 V

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