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SST213 Datasheet(PDF) 5 Page - TEMIC Semiconductors

Part # SST213
Description  N-Channel Lateral DMOS FETs
PDF  6 Pages
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Manufacturer  TEMIC [TEMIC Semiconductors]
Direct Link  http://www.temic.de
Logo TEMIC - TEMIC Semiconductors

SST213 Datasheet(HTML) 5 Page - TEMIC Semiconductors

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SD211DE/SST211 Series
Siliconix
S-51850—Rev. F, 14-Apr-97
5
Typical Characteristics (Cont’d)
Threshold Voltage vs. Substrate-Source Voltage
Leakage Current vs. Temperature
Input Admittance
Forward Admittance
Capacitance vs. Gate-Source Voltage
Body Leakage Current vs. Drain-Body Voltage
5
0
–4
–20
4
3
2
1
0
H
L
VGS = VDS = VTH
ID = 1 mA
TA = 25_C
100
10
1
25
50
75
100
125
ISBO
ID(off)
IS(off)
IGSS
(Diode)
10
04
20
8
6
4
2
0
VDS = 10 V, f = 1 MHz
VGS = VBS
C(GS+SB)
C(GS+GD+GB)
C(GD+DB)
C(DG)
012
16
8
420
VDB (V)
ID = 13 mA
1 mA
100
10
1
0.1
100
1000
bis
gis
VDS = 10 V
ID = 10 mA
TA = 25_C
100
10
1
0.1
100
1000
VDS = 10 V
ID = 10 mA
TA = 25_C
gfs
–bfs
TA – Temperature (_C)
VGS – Gate-Source Voltage (V)
f – Frequency (MHz)
f – Frequency (MHz)
–8
–12
–16
812
16
200
500
200
500
ID(off) @ VGS = VBS = –5 V, VDS = 10 V
IS(off) @ VGD = VBD = –5 V, VSD = 10 V
IGSS @ VGS = 10 V
ISBO @ VSB = 10 V
Drain Open
100
mA
100 nA
1 nA
100 pA
1 pA
10
mA
1
mA
10 nA
10 pA
VBS – Body-Source Voltage (V)



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