STL3NK40 datasheet(3/16 Pages) STMICROELECTRONICS

Part #	STL3NK40

Description	N-channel 400 V, 4.5 typ., 0.43 A, SuperMESH Power MOSFET in a PowerFLAT 5x5 package

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 16 page

DocID16246 Rev 2

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STL3NK40

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

400

VDGR

Drain-gate voltage (RGS = 20 kΩ)

400

VGS

Gate- source voltage

± 20

(1)

When mounted on FR-4 Board of 1 inch², 2 oz Cu (t < 100 s)

Drain current (continuous) at Tpcb = 25 °C

0.43

Drain current (continuous) at Tpcb = 100 °C

0.27

IDM

(1)

Drain current (pulsed)

1.72

PTOT

(1)

Total dissipation at TC = 25 °C

2.5

dv/dt (2)

ISD < 0.43 A, di/dt< 200 A/µs, VDD < 320 V

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Storage temperature

Max. operating junction temperature

-55 to 150

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-pcb

(1)

When mounted on FR-4 Board of 1 inch², 2 oz Cu (t < 100 s)

Thermal resistance junction-pcb

°C/W

Table 4. Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

0.43

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

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