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GMS87C1408 Datasheet(PDF) 13 Page - Hynix Semiconductor |
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GMS87C1408 Datasheet(HTML) 13 Page - Hynix Semiconductor |
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13 / 84 page ![]() HYUNDAI MicroElectronics GMS87C1404/GMS87C1408 Oct. 1999 Ver 1.0 11 7. ELECTRICAL CHARACTERISTICS 7.1 Absolute Maximum Ratings Supply voltage ........................................... -0.3 to +6.0 V Storage Temperature ................................-40 to +125 °C Voltage on any pin with respect to Ground (VSS) ............................................................... -0.3 to VDD+0.3 Maximum current out of VSS pin ........................200 mA Maximum current into VDD pin ..........................150 mA Maximum current sunk by (IOL per I/O Pin) ........25 mA Maximum output current sourced by (IOH per I/O Pin) ...............................................................................15 mA Maximum current ( ΣIOL) .................................... 150 mA Maximum current ( ΣIOH).................................... 100 mA Note: Stresses above those listed under “Absolute Maxi- mum Ratings” may cause permanent damage to the device. This is a stress rating only and functional op- eration of the device at any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 7.2 Recommended Operating Conditions 7.3 A/D Converter Characteristics (TA=25°C, VSS=0V, VDD=5.12V @fXIN =8MHz, VDD=3.072V @fXIN =4MHz) Parameter Symbol Condition Specifications Unit Min. Max. Supply Voltage VDD fXIN=8MHz 4.5 5.5 V fXIN=4.2MHz 2.5 5.5 V Operating Frequency fXIN VDD=4.5~5.5V 18 MHz VDD=2.5~5.5V 1 4.2 kHz Operating Temperature TOPR -20 85 °C Parameter Symbol Condition Specifications Unit Min. Typ. Max. Analog Input Voltage Range VAIN AVREFS=0 VSS - VDD V AVREFS=1 VSS - VREF Analog Power Supply Input Voltage Range VREF AVREFS=1 3 - VDD V Overall Accuracy NACC - ±1.0 ±1.5 LSB Non-Linearity Error NNLE - ±1.0 ±1.5 LSB Differential Non-Linearity Error NDNLE - ±1.0 ±1.5 LSB Zero Offset Error NZOE - ±0.5 ±1.5 LSB Full Scale Error NFSE - ±0.25 ±0.5 LSB Gain Error NNLE - ±1.0 ±1.5 LSB Conversion Time TCONV fXIN=8MHz -- 10 µS fXIN=4MHz -- 20 AVREF Input Current IREF AVREFS=1 - 0.5 1.0 mA |
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