MS10N65 datasheet(2/6 Pages) BWTECH

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MS10N65

N-Channel Enhancement Mode Power MOSFET

Publication Order Number: [MS10N65]

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Power Dissipation (TC=25°C)

5.5

Power Dissipation (TC=100°C)

0.4

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

NOTE:

1. Repetitive rating; pulse width limited by maximum junction temperature.

Thermal characteristics (Tc=25°C unless otherwise noted)

Symbol

Parameter

Typ.

Max.

Units

RθJC

Typical thermal resistance

0.8

°C/W

RθJA

62.5

Static Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VGS

VDS = VGS, ID = 250μA

2.0

4.0

*RDS(ON)

VGS = 10 V , ID = 4.75 A

0.7

0.85

BVDSS

VGS = 0 V , ID = 250μA

650

710

△BV

DSS /△TJ

ID = 250μA, Referenced to 25°C

0.6

IDSS

VDS = 650 V , VGS = 0 V

VDS = 520 V , VGS = 0 V , Tj = 125°C

100

GFS

VDS = 30 V, VDS = 0 V

100

IGSS

VDS = -30 V, VDS = 0 V

-100

Switching Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VDS = 520 V,ID = 10 A,

VGS = 10 V

Qgs

Qgd

td(on)

VDS = 325 V, ID = 10 A,

RG = 25 Ω

td(off)

180

CISS

VDS = 25 V, VGS = 0 V,

f = 1.0MHz

1210

1580

COSS

145

190

CRSS

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