MSF10N65

650V N-Channel MOSFET

Publication Order Number: [MSF10N65]

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Power Dissipation (TC = 25 °C)

Power Dissipation (TC=100°C)

52

W

0.42

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

NOTE:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=13mH, IAS=

10.0A,VDD=50V, RG=25Ω,Starting TJ=25˚C

3. ISD ≤ 10.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating temperature

Thermal characteristics (Tc=25°C unless otherwise noted)

Symbol

Parameter

Max.

Units

Junction-to-Case

2.25

°C/W

Junction-to-Ambient

62.5

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Gate Threshold Voltage

3.0

--

5.0

V

Static Drain-Source On-Resistance

--

1.95

2.4

Ω

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Drain-Source Breakdown

Voltage

900

--

--

V

△BV

DSS

/

△T

J

Breakdown Voltage

Temperature Coefficient

--

1.03

--

V/°C

Zero Gate Voltage Drain

Current

--

--

10

100

μA

Gate-Body Leakage

Current, Forward

--

--

100

nA

Gate-Body Leakage

Current, Reverse

--

--

-100

nA

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Input Capacitance

f=1.0MHz

--

1500

2010

pF

Output Capacitance

--

145

190

pF

Reverse Transfer Capacitance

--

15

20

pF