MSF10N65 datasheet(3/7 Pages) BWTECH

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MSF10N65

650V N-Channel MOSFET

Publication Order Number: [MSF10N65]

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Time

VDS=450 V, ID=6A,

RG=25Ω

Turn-On Time

120

240

td(off)

Turn-Off Delay Time

120

Turn-Off Fall Time

140

Total Gate Charge

VDS=720V,ID=6A,

VGS=10 V

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Source-Drain Diode Maximum Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source-Drain Diode Forward Current

6.0

ISM

ISM Pulsed Source-Drain Diode Forward Current

24.0

VSD

Source-Drain Diode Forward Voltage

IS=6A , VGS= 0V

1.4

trr

Reverse Recovery Time

IS=6A , VGS= 0V

diF/dt=100A/μs

780

Qrr

Reverse Recovery Charge

9.0

μC

Notes;

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=34mH, IAS=6A, VDD=50V, RG=25Ω, Starting TJ=25℃

3. ISD≦6A, di/dt≦200A/μs,VDD≦BVDSS, Starting TJ=25℃

4. Pulse Test: Pulse Width

≦ 300μs, Duty Cycle≦ 2%

5. Essentially Independent of Operating Temperature

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