MSF20N50 datasheet(2/6 Pages) BWTECH

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MSF20N50

N-Channel Enhancement Mode Power MOSFET

Publication Order Number: [MSF20N50]

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Power Dissipation (TC=25°C)

Power Dissipation (TC=100°C)

0.35

NOTE:

1. Repetitive rating; pulse width limited by maximum junction temperature.

Thermal characteristics

Symbol

Parameter

Max.

Units

Rthjc

Typical thermal resistance

3.3

°C/W

RθJA

62.5

Static Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VGS

VDS = VGS, ID=250μA

2.0

4.0

*RDS(ON)

VGS=10V , ID=9.0A

0.21

0.26

BVDSS

VGS=0 V , ID=250μA

500

△BV

DSS /△TJ

ID=250μA, Referenced to 25°C

0.5

IDSS

VDS=500V , VGS= 0 V

VDS=400V , VGS= 0 V , Tj= 125°C

IGSSF

VDS =30V, VDs=0 V

100

IGSSR

VDS =-30V, VDs=0 V

-100

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

CISS

Input Capacitance

VDS=25V, VGS=0V,

f=1.0MHz

2700

COSS

Output Capacitance

400

CRSS

Reverse Transfer Capacitance

td(on)

Turn-On Time

VDS=250 V, ID=20A,

RG=25Ω

100

Turn-On Time

400

td(off)

Turn-Off Delay Time

100

Turn-Off Fall Time

100

Total Gate Charge

VDS=400V,ID=20A,

VGS=10 V

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge (Miller Charge)

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