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MSF20N50 Datasheet(PDF) 3 Page - Bruckewell Technology LTD |
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MSF20N50 Datasheet(HTML) 3 Page - Bruckewell Technology LTD |
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3 / 6 page ![]() MSF20N50 N-Channel Enhancement Mode Power MOSFET Publication Order Number: [MSF20N50] © Bruckewell Technology Corporation Rev. A -2014 Source-Drain Diode Characteristics Symbol Test Conditions Min Typ. Max. Units IS -- -- 20 A ISM -- -- 80 VSD IF=18A , VGS=0 -- -- 1.5 V trr IF=18A , VGS=0 , dIF/dt=100A/μs -- 550 -- ns Qrr -- 7.2 -- uC NOTE: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L= 5.5mH,IAS= 20.0A,VDD=50V,RG=25Ω,Starting TJ=25°C 3. ISD ≤ 20.0 A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature |
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