Preliminary SS8P100

High Current Density Surface Mount

Ultra Low VF Schottky Rectifier

Publication Order Number: [SS8P100]

Maximum Ratings (Tc=25°C unless otherwise noted)

Parameter

Symbol

SS8PU100

Unit

Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

IFSM

120

A

Non-repetitive avalanche energy at 25 °C

IAS = 2 A per diode

EAS

20

m’J

Operating junction temperature range

TJ

-55 to +150

°C

Storage temperature range

TSTG

-55 to +150

°C

Note:

(1) Mounted on 30 mm x 30 mm Al P.C.B. with 50 mm x 25 mm x 100 mm fin heat sink

(2) Free air, mounted on recommended copper pad area

Electrical characteristics (Tc=25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Typical

Max

Instantaneous forward voltage at IF=10A, Tj=25°C

at IF=10A, Tj=125°C

VF

0.75

0.65

0.85

V

Maximum reverse current per leg

Tj=25°C

IR

20

u

’A

at working peak reverse voltage

Tj=125°C

5

m

’A

Thermal characteristics (Tc=25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Typical thermal resistance

RθJA

60

°C/W

Rthjc

3

Notes:

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms